JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2N7002W MOSFET (N-Channel)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
SOT-323
1. GATE
2. SOURCE
3. DRAIN
Parameter Symbol Va lue Unit
Drain-Source Voltage VDS 60 V
Continuous Drain Current ID 0.115 A
Power Dissipation PD 0.200 W
Thermal Resistance from Junction to Ambient RθJA 625 ℃/W
Junction Temperature TJ 150
Storage Temperature Tstg -50 ~+150
℃
Gate-Source Voltage VGS &plu***n; 20 V
www.cj- 1 J,Sep,2016
FEATURE
High density cell design for low ***(ON)
Voltage controlled ***all signal switch
Rugged and reliable
High saturation current capability
MARKING
APPLICATION
Equivalent Circuit
Load Switch for Portable Devices
DC/DC Converter
V(BR)DSS ***(on)MAX ID
60 V
5Ω@10V
115mA
7Ω@5V
1
2
3
Parameter Symbol Test conditi*** Min Typ Max Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=250 μA 60
Gate-Threshold Voltage V(GS)th VDS=VGS, ID=250 μA 1 1.6 2.5
V
Gate-body Leakage lGSS VDS=0 V, VGS=&plu***n;20 V &plu***n;80 nA
Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 80 nA
On-state Drain Current ID(on) VGS=10 V, VDS=7 V 500 mA
VGS=10 V, ID=500mA 0.9 5
Drain-Source On-Resistance ***(on)
VGS=5 V, ID=50mA 1.1 7
Ω
Forward Trans conductance gfs VDS=10 V, ID=200mA 80 500 ms
VGS=10V, ID=500mA 0.5 3.75 V
Drain-source on-voltage VDS(on)
VGS=5V, ID=50mA 0.05 0.375 V
Diode Forward Voltage VSD IS=115mA, VGS=0 V 0.55 1.2 V
Input Capacitance Ciss 50
Output Capacitance Coss 25
Reverse Transfer Capacitance Crss
VDS=25V, VGS=0V, f=1MHz
5
pF
SWITCHING TIME
Turn-on Time td(on) 20
Turn-off Time td(off)
VDD=25 V, RL=50
ID=500mA,VGEN=10 V
RG=25
40
ns
*These parameters h***e no way to verify.
Ω,
Ω
*
*
*
*
*
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25℃ unless otherwise specified
www.cj- 2 J,Sep,2016
0 6 12 18
0
2
4
6
0 2 4 6
0.0
0.2
0.4
0.6
0.8
1.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1E-3
0.01
0.1
1
0 1 2 3 4 5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0 0.2 0.4 0.6 0.8 1.0
0
1
2
3
ID=50mA
ID=500mA
ID ***(ON) ——
Ta=25℃
Pulsed
VGS ***(ON) ——
ON-RESISTANCE ***(ON) (Ω)
GATE TO SOURCE VOLTAGE VGS (V)
Ta=25℃
Pulsed
Ta=25℃
Pulsed
Transfer Characteristics
DRAIN CURRENT ID (A)
GATE TO SOURCE VOLTAGE VGS (V)
3E-3
2
Ta=25℃
Pulsed
0.3
0.03
VSD IS ——
SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE V
SD (
V)
VGS=5V
VGS=10V,9V,8V,7V,6V
VGS=4V
VGS=3V
Output Characteristics
DRAIN CURRENT ID (A)
DRAIN TO SOURCE VOLTAGE VDS (V)
VGS=5V
VGS=10V
Ta=25℃
Pulsed
ON-RESISTANCE ***(ON) (Ω)
DRAIN CURRENT ID (A)
Typical Characteristics
3 J,Sep,2016
Min Max Min Max
A 0.900 1.100 0.035 0.043
A1 0.000 0.100 0.000 0.004
A2 0.900 1.000 0.035 0.039
b 0.200 0.400 0.008 0.016
c 0.080 0.150 0.003 0.006
D 2.000 2.200 0.079 0.087
E 1.150 1.350 0.045 0.053
E1 2.150 2.450 0.085 0.096
e
e1 1.200 1.400 0.047 0.055
L
L1 0.260 0.460 0.010 0.018
0° 8° 0° 8°
0.525 REF 0.021 REF
Symbol Dimensi*** In Millimeters Dimensi*** In Inches
0.650 TYP 0.026 TYP
J,Sep,2016
SOT-323 Tape and reel
1000
500
2000
1500
2500
3000
G
H
W1
W2
D1
I
D
REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) G.W.(kg)
3000 pcs 7 inch 30,000 pcs 203×203×195 120,000 pcs 438×438×220
SOT-323 Embossed Carrier Tape
SOT-323 Tape Leader and Trailer
SOT-323 Reel
Pkg type
SOT-323
Dimensi*** are in millimeter
A B C d E F P0 P P1 W
2.25 2.55 1.19 Ø1.55 1.75 3.50 4.00 4.00 2.00 8.00
D2
Packaging Description:
SOT-323 parts are shipped in tape. The carrier
tape is made from a dissipative (carbon filled)
polycarbonate resin. The cover tape is a multilayer
film (Heat Activated Adhesive in nature) primarily
composed of polyester film, adhesive layer, sealant,
and anti-static sprayed agent. These reeled parts in
standard option are shipped with 3,000 units per 7"
or 17.8cm diameter reel. The reels are clear in color
and is made of polystyrene plastic (anti-static
coated).
P0 P1
P
F
W
E
A
d
A
A
Trailer Tape Leader Tape
50&plu***n;2 Empty Pockets Components 100&plu***n;2 Empty Pockets
Reel Option
7''Dia
Dimensi*** are in millimeter
D D1 D2 G H I W1 W2
Ø178.00 54.40 13.00 R78.00 R25.60 R6.50 9.50 12.30
B
C
A-A
5 J,Sep,2016