型号：MT29F64G08CBAA***
品牌：Micron Technology,Inc. （美光科技）
类别：储存器**NAND闪存**海量闪存
Specificati***
*Density: 64Gb
*Status: Production
*RoHS: Yes
*Width: x8
*Voltage: 3.3V
*Package: TSOP
*Pin Count: 48-pin
*Bits/Cell: MLC
*MT/s:
*I/O: Common
*Op Temp:-40Cto +85C
General Description
Micron NAND Flash devices include an asynchronous data interface for high-performance
I/O operati***. These devices use a highly multiplexed 8-bit bus (DQx) to transfer
commands, address, and data. There are five control signals used to implement the asynchronous
data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control
ha***are write protection (WP#) and monitor device status (R/B#).
This Micron NAND Flash device additionally includes a synchronous data interface for
high-performance I/O operati***. When the synchronous interface is active, WE# becomes
CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe
(DQS).
This ha***are interface creates a low pin-count device with a standard pinout that remains
the same from one density to another, enabling future upgrades to higher densities
with no board redesign.
A target is the unit of memory accessed by a chip enable signal. A target contains one or
more NAND Flash die. A NAND Flash die is the minimum unit that can independently
execute commands and report status. A NAND Flash die, in the ONFI specification, is
referred to as a logical unit (LUN). For further details, see Device and Array Organization.