| 品牌 | 华晶 | 型号 | CS830A8H |
| 种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 耗尽型 | 用途 | SW-REG/开关电源 |
| 封装外形 | ***D(SO)/表面封装 | 材料 | N-FET硅N沟道 |
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General Description：
VDSS 500 V
ID 5 A
PD(TC=25℃) 75 W
***(ON) 1.2 Ω
CS830A8H,the silicon N-channel EnhancedVDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and
enhance the ***alanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form isTO-220AB, which acco***
with the RoHS standard.
Features：
z Fast Switching
z Low ON Resistance(***on≤1.5Ω)
z Low Gate Charge (Typical Data: 18nC)
z Low Reverse transfer capacitances(Typical: 14pF)
z 100% Single Pulse ***alanche energy Test