| 品牌 | 华晶 | 型号 | CS2N60A3H |
| 种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 耗尽型 | 封装外形 | ***D(SO)/表面封装 |
| 材料 | N-FET硅N沟道 |
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General Description：
VDSS 600V
ID 2A
PD (TC=25℃) 35W
***(ON) 4.0Ω
CS2N60A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the ***alanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form isTO-251, which acco*** with the RoHS standard..
Features：
z Fast Switching
z Low ON Resistance(***on≤4.5Ω)
z Low Gate Charge (Typical Data:8nC)
z Low Reverse transfer capacitances(Typical:3.8pF)
z 100% Single Pulse ***alanche energy Test