| 品牌 | 华晶 | 型号 | CS75N75B8H |
| 种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 耗尽型 | 封装外形 | ***D(SO)/表面封装 |
| 材料 | N-FET硅N沟道 | 开启电压 | 75（V） |
| 夹断电压 | 20（V） | 跨导 | 1（μS） |
| 极间电容 | 1（pF） | 低频噪声系数 | 1（dB） |
| ***大漏极电流 | 100A（mA） | ***大耗散功率 | 230（mW） |
General Description：
VDSS 75 V
ID 100 A
PD(TC=25℃) 230 W
***(ON) 9.5 mΩ
CS75N75 B8H, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and
enhance the ***alanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form isTO-220AB, which acco***
with the RoHS standard.
Features：
z Fast Switching
z Low ON Resistance(***on≤11mΩ)
z Low Gate Charge (Typical Data:71nC)
z Low Reverse transfer capacitances(Typical:40pF)
z 100% Single Pulse ***alanche energy Test