| 品牌 | 华晶 | 型号 | CS10N60A8HD |
| 种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 耗尽型 | 封装外形 | ***D(SO)/表面封装 |
| 材料 | N-FET硅N沟道 | 开启电压 | 600（V） |
| 夹断电压 | 20（V） | ***大漏极电流 | 10A（mA） |
| ***大耗散功率 | 125（mW） |
General Description：
VDSS 600 V
ID 10 A
PD (TC=25℃) 125 W
***(ON) 0.63 Ω
CS10N60A8HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the ***alanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form is
TO-220AB, which acco*** with the RoHS standard.
Features：
z Fast Switching
z ESD Improved Capability
z Low Gate Charge (Typical Data:60nC)
z Low Reverse transfer capacitances(Typical:28pF)
z 100% Single Pulse ***alanche energy Test