江苏长电科技股份有限公司
MOSFET系列
型号 类型 PD ID VBR(DSS) ***(on)(max) VGS(th) gfs(min) 印记 封装形式 Circuit
(W) (A) (V) (Ω) ID VGS (V) ID(μA) (S) VDS ID G
(A) (V) (V) (A) Diagram
CJB01N65B N-ch MOS 2 1 650 14 0.6 10 2~4 250 - - - TO-263-2L Circuit 60
CJB02N65 N-ch MOS 2 2 650 4.4 1 10 2~4 250 - - - TO-263-2L Circuit 60
CJB04N60A N-ch MOS 2 4 600 3 2 10 2~4 250 2.5 50 2 TO-263-2L Circuit 60
CJB04N65 N-ch MOS 2 4 650 3 2 10 2~4 250 - - - TO-263-2L Circuit 60
CJB04N65A N-ch MOS 2 4 650 3 2 10 2~4 250 - - - TO-263-2L Circuit 60
CJB10N60 N-ch MOS 2 10 600 1 5 10 2~4 250 - - - TO-263-2L Circuit 60
CJD01N60 N-ch MOS 1 1 600 10 0.6 10 2~4 250 0.5 50 0.5 TO-251-3L(4R) Circuit 60
CJD01N65B N-ch MOS 1.25 1 650 14 0.6 10 2~4 250 - - - TO-251-3L Circuit 60
CJD02N60 N-ch MOS 1.25 2 600 4.4 1 10 2~4 250 1 50 1 TO-251-3L Circuit 60
CJD02N65 N-ch MOS 1.25 2 650 4.4 1 10 2~4 250 - - - TO-251-3L Circuit 60
CJD04N60A N-ch MOS 1.25 4 600 3 2 10 2~4 250 2.5 50 2 TO-251-3L Circuit 60
CJD04N65 N-ch MOS 1.25 4 650 3 2 10 2~4 250 - - - TO-251-3L Circuit 60
CJD04N65A N-ch MOS 1.25 4 650 3 2 10 2~4 250 - - - TO-251-3L Circuit 60
CJP01N65B N-ch MOS 2 1 650 14 0.6 10 2~4 250 - - - TO-220-3L Circuit 60
CJP02N60 N-ch MOS 2 2 600 4.4 1 10 2~4 250 1 50 1 TO-220-3L Circuit 60
CJP02N65 N-ch MOS 2 2 650 4.4 1 10 2~4 250 - - -