MRF8S9200NR3

RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for CDMA base station applicati*** with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout
 = 58 Watts ***g., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 200 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout
), Designed for
Enhanced Ruggedness
• Typical Pout
 @ 1 dB Compression Point   200 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applicati***
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Ree