BLF642

冝A 35 W LDMOS RF power transistor for broadcast tran***itter and industrial applicati***.
The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
applicati***.
 CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.2 A :
冨 ***erage output power = 35 W
冨 Power gain = 19 dB
冨 Drain efficiency = 63 %
冝 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.2 A :
冨 ***erage output power = 17.5 W
冨 Power gain = 19 dB
冨 Drain efficiency = 48 %
冨 Intermodulation distortion = 儃28 dBc
冝 Integrated ESD protection
冝 Excellent ruggedness
冝 High power gain
冝 High efficiency
冝 Excellent reliability
冝 Easy power control
冝 Compliant