MICROW***E POWER GaAs FET
LOW INTERMODULATION DISTORTION
HIGH GAIN
IM3=-45 dBc at Pout= 28.0dBm G1dB=6.0 dB at 10.7 GHz to 11.7 GHz
Single Carrier Level
BROAD BAND INTERNALLY MATCHED FET
HIGH POWER
P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz
HERMETICALLY SEALED PACKAGE