|
Item |
Unit |
Sepcification |
Remarks |
|
Crystal Growth |
|
VGF HB VB |
|
|
Dopant |
|
Si or Zn or undope |
N-type/ P-type/ undope |
|
Diameter |
|
1” 2” 3” 4” 6” |
|
|
Orientation |
|
(100) (111) |
Other orientation ***ailable |
|
Carrier Concentration |
/cm3 |
0.4~2.5*1018 |
Other spec. ***ailable |
|
Resisitivity |
|
(0.8-9)×10-3 (1-9)×1017 |
Other spec. ***ailable |
|
Mobility |
cm2/v.s |
1500~3000 3000~5000 |
Other spec. ***ailable |
|
EPD |
/cm2 |
<100 <500<> <5000 <10000<> |
Other spec. ***ailable |
|
Thickness |
|
~350um ~625um |
Other spec. ***ailable |
|
TTV |
um |
<10um or better |
|
|
TIR |
um |
<10um or better |
|
|
Bow |
um |
<10um or better |
|
|
Warp |
um |
<10um or better |
|
|
Surface |
|
PE PP |
|
|
Epi-ready |
|
Yes |
|