哈尔滨特博科技有限公司***生产定制***化***单晶衬底片GaAs wafer、多晶晶棒。
尺寸2寸 3寸 4寸 6寸
晶向（100）（111）
类型：N- type 掺Si, P- type 掺Zn, 半绝缘Undope
产品规格请参考下表
|
Parameter |
Guaranteed / Actual Values |
UOM |
|
|
Growth Method: |
VGF |
|
|
|
Conduct Type: |
S-I-N |
|
|
|
Dopant: |
Undoped |
|
|
|
Diameter: |
50.7&plu***n; 0.1 |
mm |
|
|
Orientation: |
(100)&plu***n; 0.50 |
|
|
|
OF location/length: |
EJ [ 0-1-1]&plu***n; 0.50/16&plu***n;1 |
|
|
|
IF location/length: |
EJ [ 0-1 1 ]&plu***n; 0.50/7&plu***n;1 |
|
|
|
Resistivity: |
Min: 1.0 E8 |
Max: 2.2 E8 |
Ω·cm |
|
Mobility: |
Min: 4500 |
Max: 5482 |
cm2/v.s |
|
EPD: |
Min: 700 |
Max: 800 |
/ cm2 |
|
Thickness: |
350&plu***n; 20 |
µm |
|
|
Edge Rounding: |
0.25 |
mmR |
|
|
Laser Marking: |
N/A |
|
|
|
TTV/TIR: |
Max: 10 |
µm |
|
|
BOW: |
Max: 10 |
µm |
|
|
Warp: |
Max: 10 |
µm |
|
|
Partical Count: |
＜50/wafer(for particle>0.3um) |
|
|
|
Surface Finish– front: |
Polished |
|
|
|
Surface Finish –back: |
Etched |
|
|
|
Epi-Ready: |
Yes |
|
|