Semi-conducting Ge Specificati***
| Growth Method | VGF |
| Dopant | n-type: As; p-type: Ga |
| Wafer Shape | Round (DIA: 2" 4" 6") |
| Surface Orientation** | (100)&plu***n;0.5° |
**Other Orientati*** maybe ***ailable upon request
| Dopant | As (n-type) | Ga (p-type) |
| Resistivity (Ω.cm) | 0.05-0.25 | 0.005-0.04 |
| Etch Pitch Density (cm2) | ≤ 300 | ≤ 300 |
| Wafer Diameter (mm) | 50.8&plu***n;0.3 | 100&plu***n;0.3 |
| Thickness (µm) | 175&plu***n;25 | 175&plu***n;25 |
| TTV [P/P] (µm) | ≤ 15 | ≤ 15 |
| WARP (µm) | ≤ 25 | ≤ 25 |
| IF* (mm) | 17&plu***n;1 | 32.5&plu***n;1 |
| OF (mm) | 7&plu***n;1 | 18&plu***n;1 |
| Polish** | E/E, P/E, P/G | E/E, P/E, P/G |
| Backside Ra (µm)*** | < 0.1 | < 0.1 |
Note: Other Specificati*** maybe ***ailable upon request
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