三菱功放模块 RA60H4047M1

MITSUBISHI RF MOSFET MODULE  RA60H4047M1

DESCRIPTION

The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a ***all leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum).

The nominal output power becomes ***ailable at the state that VGG is 4V (typical) and 5V (maximum). At VGG=5V, the typical gate currents are 5mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

• Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

• Broadband Frequency Range: 400-470MHz

• Metal shield structure that makes the improvements of spurious radiation simple

• Low-Power Control Current IGG=5mA (typ) @ VGG=5V

• Module Size: 67 x 18 x 9.9 mm

• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.

RoHS COMPLIANCE

• RA60H4047M1 is a RoHS compliant product.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However, it is applicable to the following excepti*** of RoHS Directi***.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.