三星显存 K4M51323PE-HG75 全新原装
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBG***
FEATURES
1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interle***e).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
-. DPD (Deep Power Down)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Extended Temperature Operation (-25°C ~ 85°C).
• Commercial Temperature Operation (-25°C ~ 70°C).
• 90Balls FBGA( -SXXX -Pb, -DXXX -Pb Free
GENERAL DESCRIPTION
The K4M51323PC is 536,870,912 bits synchronous high data
rate Dynamic RAM organized as 4 x 4,196,304 wo*** by 32 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transacti*** are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applicati***
