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电气特性 |
(Tj=25℃) |
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参数 |
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描述 |
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Min. |
Typ. |
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Max. |
Unit |
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Test Condition |
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V(BR)DSS |
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漏源击穿电压 |
650 |
— |
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— |
V |
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VGS =0V, ID =250µA |
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RDS(ON) |
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静态漏源 |
— |
0.75 |
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0.85 |
Ω |
VGS =10V, ID =5.0A** |
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VGS(th) |
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栅极阈值电压 |
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2 |
— |
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4 |
V |
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VDS=VGS, ID =250μA |
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IDSS |
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漏电流源 |
— |
— |
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1 |
μA |
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VDS =650V, VGS =0V |
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IGSS |
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门体漏电流 |
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— |
— |
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±100 |
nA |
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VDS =0V, VGS =±30V |
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TJ, TSTG |
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操作和储存温度范围 |
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-55℃ to 150℃ Max |
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力学数据 |
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核心面积； |
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3.993 ×5.058 |
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mm2 |
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切屑图 |
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门垫大小 |
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0.31 × 0.52 |
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(排除划线) |
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隶线尺寸 |
100 |
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μm |
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晶圆diameter |
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100 |
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mm |
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晶圆厚度 |
230 |
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μm |
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平焊位置； |
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90 |
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deg |
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粗略估计 |
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430 |
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源金属化 |
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Al, Si,Cu |
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排水金属化 |
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V, Ni, Ag |
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推荐d |
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储存在原始容器中，在干燥的氮气中, |
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贮存环境 |
<在23℃±3℃常温6个月 > |
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变