100% EAS Guaranteed
Green Device ***ailable
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Description
FKS4004 N-Ch 40V Fast Switching MOSFETs
Product Summary
SOP8 Pin Configuration
|
BVDSS |
***ON |
ID |
|
40V |
12mΩ |
10A |
The FKS4004 is the high cell density trenched N-ch MOSFETs, which provide excellent ***ON and gate charge for most of the synchronous *** converter applicati***.
The FKS4004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings
Symbol |
Parameter |
Rating |
VDS |
Drain-Source Voltage |
40 |
VGS |
Gate-Source Voltage |
&plu***n;20 |
|
ID@TA=25°C |
Continuous Drain Current, VGS @ 10V1 |
10 |
|
ID@TA=70°C |
Continuous Drain Current, VGS @ 10V1 |
8 |
IDM |
Pulsed Drain Current2 |
34 |
|
EAS |
Single Pulse ***alanche Energy3 |
31 |
|
IAS |
***alanche Current |
25 |
|
PD@TA=25°C |
Total Power Dissipation4 |
1.5 |
|
TSTG |
Storage Temperature Range |
-55 to 150 |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
Units
V V A A A mJ A W °C °C
Thermal Data
|
Symbol |
Parameter |
Typ. |
Max. |
Unit |
|
RθJA |
Thermal Resistance Junction-ambient (Steady State)1 |
--- |
65 |
°C/W |
|
RθJC |
Thermal Resistance Junction-Case1 |
--- |
30 |
°C/W |