otherwise specified.
2.Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000),
each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A,
a 1 Kbyte block, and then the block is
erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more
than once per erase operation (overwriting prohibited).
3.Endurance to guarantee all electrical
characteristics after program and erase.
(1 to Min. value can be guaranteed).
4.Standard of block A and block B when program and erase endurance
exceeds 1,000 times. Byte program time to 1,000 times
is the same as that in program ROM.
5.In a system that executes multiple programming operati***,
the actual erasure count can be
reduced by writing to sequential
addresses in turn so that as much of the block as possib
le is used up before performing an
erase operation. For example,
when programming groups of 16 bytes, the effective number of
rewrites can be minimized by
programming up to 128 groups
before erasing them all in one operation. It is also advisable to
retain data on the erase count of each block and limit the
number of erase operati*** to a certain number.
6.If an error occurs during block erase, attempt to execute t
he clear status register command,
then execute the block erase
command at least three times until the erase error does not occur.
7.Customers desiring program/erase failure rate information
should contact their Renesas te
chnical support representative.
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